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| savantic semiconductor product specification 1 silicon npn power transistors 2sD2333 d escription with to-3pml package high breakdown voltage built-in damper diode applications color tv horizontal deflection output applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 600 v v ebo emitter-base voltage open collector 5 v i c collector current 5 a i bm base current-peak 2.5 a p c collector power dissipation t c =25 80 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pml) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2sD2333 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma; i b =0 800 v v (br)ebo emitter-base breakdown voltage i e =200ma , i c =0 5 v v cesat collector-emitter saturation voltage i c =4a ;i b =0.8a 5.0 v v besat base-emitter saturation voltage i c =4a; i b =0.8a 1.5 v i cbo collector cut-off current v cb =500v; i e =0 10 a h fe dc current gain i c =1a ; v ce =5v 8 v f diode forward voltage i f =5a 2.0 v savantic semiconductor product specification 3 silicon npn power transistors 2sD2333 package outline fig.2 outline dimensions |
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